Title :
Investigation of GaAs based MOVPE-grown AlxGa1−xAsyP1−y strain compensating layers
Author :
Maassdorf, Andre ; Lochmann, A. ; Weyers, M.
Author_Institution :
Ferdinand-Braun-Inst., Leibniz-Inst. fuer Hoechstfrequenztechnik, Berlin, Germany
Abstract :
GaAs-based edge-emitting diode lasers designed for the near-infrared spectral region usually contain waveguide and cladding layers consisting of AlxGa1-xAs. AlxGa1-xAs-on-GaAs is known to be almost perfectly lattice matched. We have grown AlxGa1-xAsyP1-y/AlxGa1-xAs test samples targeting a partial compensation of the room temperature wafer bow by incorporating up to 4% phosphorus in Al0.85GaAs. The proposed strain compensation scheme has been applied in complete laser devices by partially replacing Al0.85Ga0.15As with Al0.85Ga0.15AsyP1-y. The results will be discussed.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; claddings; gallium arsenide; optical waveguides; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; AlxGa1-xAsyP1-y; GaAs based MOVPE-grown strain compensating layers; GaAs-based edge-emitting diode lasers; cladding layers; complete laser devices; near-infrared spectral region; partial compensation; strain compensation scheme; temperature 293 K to 298 K; wafer bow; waveguide; Diode lasers; Extraterrestrial measurements; Gallium arsenide; Lattices; Strain; Temperature measurement; Waveguide lasers; Metalorganic vapor phase epitaxy; high resolution X-ray diffraction; in-situ curvature measurements; laser diodes;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2012 International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4673-1725-2
DOI :
10.1109/ICIPRM.2012.6403316
