Enhancement-mode pseudomorphic high-electron-mobility transistor with a nanoscale oxidized GaAs gate

Author

Kuan-Wei Lee ; Hsien-Cheng Lin ; Yeong-Her Wang

Author_Institution

Dept. of Electron. Eng., I-Shou Univ., Kaohsiung, Taiwan

fYear

2012

fDate

27-30 Aug. 2012

Firstpage

54

Lastpage

56

Abstract

This study examines the feasibility of an enhancement-mode (E-mode) pseudomorphic high-electron-mobility transistor (PHEMT) with a nanoscale oxidized GaAs gate using liquid phase oxidation (LPO). Using LPO, the threshold voltage (V_th) can be shifted positively. Results indicated a reduced leakage current, a higher breakdown voltage, and an improved subthreshold swing compared to those of the Schottky-gate PHEMT. Therefore, LPO did not degrade the DC performance of the device.

Keywords

III-V semiconductors; gallium arsenide; high electron mobility transistors; leakage currents; oxidation; semiconductor device breakdown; GaAs; Schottky-gate pseudomorphic high-electron-mobility transistor; breakdown voltage; device DC performance; enhancement-mode pseudomorphic high-electron-mobility transistor; improved subthreshold swing; liquid phase oxidation; nanoscale oxidized GaAs gate; reduced leakage current; threshold voltage; Gallium arsenide; Indium gallium arsenide; Leakage current; Logic gates; Oxidation; PHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2012 International Conference on

Conference_Location

Santa Barbara, CA

ISSN

1092-8669

Print_ISBN

978-1-4673-1725-2

Type

conf

DOI

10.1109/ICIPRM.2012.6403317

Filename

6403317