Title :
Enhancement-mode pseudomorphic high-electron-mobility transistor with a nanoscale oxidized GaAs gate
Author :
Kuan-Wei Lee ; Hsien-Cheng Lin ; Yeong-Her Wang
Author_Institution :
Dept. of Electron. Eng., I-Shou Univ., Kaohsiung, Taiwan
Abstract :
This study examines the feasibility of an enhancement-mode (E-mode) pseudomorphic high-electron-mobility transistor (PHEMT) with a nanoscale oxidized GaAs gate using liquid phase oxidation (LPO). Using LPO, the threshold voltage (Vth) can be shifted positively. Results indicated a reduced leakage current, a higher breakdown voltage, and an improved subthreshold swing compared to those of the Schottky-gate PHEMT. Therefore, LPO did not degrade the DC performance of the device.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; leakage currents; oxidation; semiconductor device breakdown; GaAs; Schottky-gate pseudomorphic high-electron-mobility transistor; breakdown voltage; device DC performance; enhancement-mode pseudomorphic high-electron-mobility transistor; improved subthreshold swing; liquid phase oxidation; nanoscale oxidized GaAs gate; reduced leakage current; threshold voltage; Gallium arsenide; Indium gallium arsenide; Leakage current; Logic gates; Oxidation; PHEMTs;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2012 International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4673-1725-2
DOI :
10.1109/ICIPRM.2012.6403317
