High efficiency and broad-band operation of monolithically integrated W-Band HBV frequency tripler

Author

Malko, Aleksandra ; Bryllert, Tomas ; Vukusic, Josip ; Stake, Jan

Author_Institution

Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Gothenburg, Sweden

fYear

2012

fDate

27-30 Aug. 2012

Firstpage

92

Lastpage

94

Abstract

We report on a state-of-the-art monolithically integrated heterostructure barrier varactor (HBV) frequency tripler operating in the W-band frequency range. The device utilizes series connection of four HBV diode mesas, with total 12 barriers, and a cross section area of 700 μm². The presented tripler withstands 800 mW input power, while delivering 185 mW of output power at 107 GHz. The corresponding conversion efficiency was measured to be 23% and the circuit exhibited 15% 3-dB bandwidth.

Keywords

frequency multipliers; millimetre wave diodes; varactors; HBV diode mesas; frequency 102 GHz; monolithically integrated W-Band HBV frequency tripler; monolithically integrated W-Band heterostructure barrier varactor frequency tripler; power 800 mW; Bandwidth; Indium gallium arsenide; Indium phosphide; Power amplifiers; Power generation; Varactors; III–V semiconductors; frequency multipliers; heterostructure barrier varactors (HBVs); millimeter wave diodes; power sources; varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2012 International Conference on

Conference_Location

Santa Barbara, CA

ISSN

1092-8669

Print_ISBN

978-1-4673-1725-2

Type

conf

DOI

10.1109/ICIPRM.2012.6403327

Filename

6403327