Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells to Si

Monolithic integration of InP-based materials on Si will allow lasers as well as optical amplifiers operating at 1.55μm to be efficiently included in photonic integrated circuits. We demonstrate here oxide-free heteroepitaxial bonding of InP-clad GaInAs quantum wells to Si, with an atomic-plane-thick reconstruction across the InP-Si interface. The wells photoluminescence emitted-wavelength demonstrates no shift after bonding. Several InP surface activation procedures have been investigated. This bonding approach is compatible with guiding designs including a nanostructuration, thus enabling specific designs associated to desirable optical functions.