Interface and surface dielectric anisotropies of GaP/Si(100)

In situ control of the formation of the III-V/Si(100) heterointerface is crucial for high-efficiency optoelectronic devices. We analyzed in situ reflectance anisotropy spectra of pseudomorphical GaP/Si(100) films which deviate from the RA spectra of well-known GaP/Si(100). We derived an equation [2] to separate different contributions, in particular surface and interface contributions. The resulting GaP/Si(100) surface dielectric anisotropy allows for a precise numerical in situ quantification of the APD content and agrees with the GaP(100) surface anisotropy. Deviations between the homo- and heteroepitaxial RA spectra can be attributed to an anisotropic GaP/Si(100) interface which we addressed in situ using RAS.