Title :
10-Gbit/s direct modulation of optically pumped InGaAlAs multiple-quantum-well photonic-crystal nanocavity laser up to 100°C
Author :
Sato, Takao ; Takeda, Kenji ; Imai, H. ; Shinya, Akihiko ; Nozaki, Kengo ; Taniyama, H. ; Hasebe, Koichi ; Kobayashi, Wataru ; Kakitsuka, Takaaki ; Notomi, M. ; Matsuo, Shoichiro
Author_Institution :
NTT Photonics Labs., NTT Corp., Atsugi, Japan
Abstract :
We demonstrate the 10-Gbit/s direct modulation of optically pumped photonic-crystal (PhC) nanocavity lasers at up to 100°C by using an InGaAlAs multiple-quantum-well (MQW) structure as an active region. The device exhibits an output power exceeding 20 μW and a maximum 3-dB bandwidth of 8.3 GHz at an operating temperature of 100°C. In addition, when the laser is modulated at 10 Gbit/s, low energy costs of 7.2 fJ/bit at 25°C and 23.4 fJ/bit at 100°C are successfully achieved. Thus an InGaAlAs MQW PhC nanocavity laser is a promising candidate for the light source of a photonic network on a CMOS chip.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser cavity resonators; nanophotonics; optical modulation; optical pumping; photonic crystals; quantum well lasers; CMOS chip; InGaAlAs; MQW PhC nanocavity laser; active region; bandwidth 8.3 GHz; bit rate 10 Gbit/s; direct modulation; light source; multiple-quantum-well structure; operating temperature; optically pumped multiple-quantum-well photonic-crystal nanocavity laser; output power; photonic network; temperature 100 degC; temperature 25 degC; Laser excitation; Measurement by laser beam; Modulation; Optical waveguides; Pump lasers; Quantum well devices; Photonic crystals; Photonic integrated circuits; Semiconductor lasers;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2012 International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4673-1725-2
DOI :
10.1109/ICIPRM.2012.6403342
