Title :
High performance substitutional-gate MOSFETs using MBE source-drain regrowth and scaled gate oxides
Author :
Sanghoon Lee ; Carter, A.D. ; Law, Jeremy J. M. ; Elias, D.C. ; Chobpattana, Varistha ; Hong Lu ; Thibeault, Brian J. ; Mitchell, W. ; Stemmer, Susanne ; Gossard, Arthur C. ; Rodwell, Mark J. W.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, Santa Barbara, CA, USA
Abstract :
We report high transconductance MOSFETs with scaled dielectric (1.2 nm EOT) fabricated using a substitutional-gate process with MBE source/drain regrowth. A 50 nm-Lg and 1.2 nm EOT device shows 0.8 mA/μm on-current at Vgs-Vth = 0.8 V and Vds = 0.5 V and 1.0 mS/μm peak transconductance at Vds = 0.5 V which are 25% and 40% higher than those of a 1.65 nm EOT control device, respectively. Transmission line method (TLM) measurements indicate 0.8 Ohm-μm2 metal-semiconductor contact resistivity and 18 Ohm sheet resistance of the regrown N+ source-drain contact layer.
Keywords :
MOSFET; electrical resistivity; molecular beam epitaxial growth; semiconductor-metal boundaries; transmission line matrix methods; Al2O3-HfO2; EOT control device; EOT device; MBE source-drain regrowth; TLM measurements; equivalent oxide thickness; metal-semiconductor contact resistivity; peak transconductance; regrown N+ source-drain contact layer; resistance 18 ohm; scaled dielectric; scaled gate oxides; sheet resistance; size 50 nm; substitutional-gate MOSFET; substitutional-gate process; transmission line method; voltage 0.5 V; voltage 0.8 V; Aluminum oxide; Current density; Dielectrics; Hafnium compounds; Logic gates; MOSFETs; Transconductance;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2012 International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4673-1725-2
DOI :
10.1109/ICIPRM.2012.6403345
