Title :
Sulfur cleaning for (100), (111)A, and (111)B InGaAs surfaces with In content of 0.53 and 0.70 and their Al2O3/InGaAs MOS interface properties
Author :
Yokoyama, Masafumi ; Taoka, Noriyuki ; Suzuki, Ryo ; Ichikawa, Osamu ; Yamada, Hiroyoshi ; Fukuhara, N. ; Hata, Masaharu ; Sugiyama, Masakazu ; Nakano, Yoshiaki ; Takenaka, Mitsuru ; Takagi, Shinichi
Author_Institution :
Univ. of Tokyo, Tokyo, Japan
Abstract :
We have studied the impact of sulfur cleaning for (100), (111)A, and (111)B InGaAs surfaces with In content of 0.53 and 0.70 and their Al2O3/InGaAs MOS interfaces using an (NH4)2Sx solution. We found that the sulfur cleaning can effectively remove native oxides from InGaAs surfaces and passivate the InGaAs surfaces by sulfur atoms. Combining with trivalent oxide passivation using Al2O3, the Al2O3/InGaAs MOS interfaces with sulfur cleaning can realize good interface properties with the small frequency dispersion of the capacitance versus voltage (C - V) curves in accumulation region with independent of In content and the surface orientations.
Keywords :
III-V semiconductors; MIS structures; aluminium compounds; gallium arsenide; indium compounds; passivation; surface cleaning; (100) InGaAs surfaces; (111)A InGaAs surfaces; (111)B InGaAs surfaces; Al2O3-InGaAs; C-V curves; InGaAs; MOS interface properties; capacitance-voltage curves; frequency dispersion; passivation; sulfur cleaning; Aluminum oxide; Cleaning; Dispersion; Indium gallium arsenide; Passivation; Voltage measurement; CMOS technology; Capacitors; III–V semiconductor materials; MOS devices; Semiconductor-insulator interfaces; surface engineering;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2012 International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4673-1725-2
DOI :
10.1109/ICIPRM.2012.6403348
