DocumentCode :
587838
Title :
InP HBT with 55-nm-wide emitter and relationship between emitter width and current density
Author :
Tanaka, Kiyoshi ; Miyamoto, Yutaka
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan
fYear :
2012
fDate :
27-30 Aug. 2012
Firstpage :
188
Lastpage :
191
Abstract :
We fabricated an InP heterojunction bipolar transistor (HBT) with a 55-nm-wide emitter. For an emitter width of 55 nm and that greater than 300 nm, the maximum gain was around 15 and around 120, respectively. To confirm the relationship between the acceptable current density and the emitter width, we measured the current density when the current gain was half its maximum value. The measured current density Jhalf increased with a decrease in the emitter width. The highest observed current density was approximately 5 MA/cm2 and was nearly equal to the highest reported current density of InP HBTs.
Keywords :
III-V semiconductors; current density; heterojunction bipolar transistors; indium compounds; semiconductor device measurement; HBT; InP; current density; current gain; emitter width; heterojunction bipolar transistor; maximum gain; size 55 nm; Current density; Heterojunction bipolar transistors; Indium phosphide; Lithography; Scanning electron microscopy; Time measurement; InP; electron beam lithography; heterojunction bipolar transistor; self-heating effect;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2012 International Conference on
Conference_Location :
Santa Barbara, CA
ISSN :
1092-8669
Print_ISBN :
978-1-4673-1725-2
Type :
conf
DOI :
10.1109/ICIPRM.2012.6403354
Filename :
6403354
Link To Document :
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