Lower limits to specific contact resistivity

Author

Baraskar, Ashish ; Gossard, Arthur C. ; Rodwell, Mark J. W.

Author_Institution

GLOBALFOUNDRIES, Yorktown Heights, NY, USA

fYear

2012

fDate

27-30 Aug. 2012

Firstpage

196

Lastpage

199

Abstract

We calculate minimum feasible contact resistivities to n-type and p-type InAs and In_0.53Ga_0.47As. Resistivities were calculated for a range of Schottky barrier heights as well as for the case where the transmission probability is unity (Landauer limit). Calculations are compared with recent experimental data. Experimental contact resistivities for n-In_0.53Ga_0.47As and n-InAs lie within 2.5:1 of calculated resistivities given generally accepted values of Schottky barrier potential. Computed resistivities in the presence of a barrier are only 3.5:1 to 4:1 above Landauer limits.

Keywords

III-V semiconductors; Schottky barriers; contact resistance; gallium arsenide; indium compounds; In_0.53Ga_0.47As; InAs; Landauer limits; Schottky barrier heights; Schottky barrier potential; minimum contact resistivities; n-type InAs; p-type InAs; specific contact resistivity; transmission probability; Charge carrier processes; Conductivity; Indium gallium arsenide; Indium phosphide; Metals; Ohmic contacts; Schottky barriers; Contact resistivity; Landauer limit; Schottky barrier; metal semiconductor junctions; transmission probability;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2012 International Conference on

Conference_Location

Santa Barbara, CA

ISSN

1092-8669

Print_ISBN

978-1-4673-1725-2

Type

conf

DOI

10.1109/ICIPRM.2012.6403356

Filename

6403356