DocumentCode :
587839
Title :
Lower limits to specific contact resistivity
Author :
Baraskar, Ashish ; Gossard, Arthur C. ; Rodwell, Mark J. W.
Author_Institution :
GLOBALFOUNDRIES, Yorktown Heights, NY, USA
fYear :
2012
fDate :
27-30 Aug. 2012
Firstpage :
196
Lastpage :
199
Abstract :
We calculate minimum feasible contact resistivities to n-type and p-type InAs and In0.53Ga0.47As. Resistivities were calculated for a range of Schottky barrier heights as well as for the case where the transmission probability is unity (Landauer limit). Calculations are compared with recent experimental data. Experimental contact resistivities for n-In0.53Ga0.47As and n-InAs lie within 2.5:1 of calculated resistivities given generally accepted values of Schottky barrier potential. Computed resistivities in the presence of a barrier are only 3.5:1 to 4:1 above Landauer limits.
Keywords :
III-V semiconductors; Schottky barriers; contact resistance; gallium arsenide; indium compounds; In0.53Ga0.47As; InAs; Landauer limits; Schottky barrier heights; Schottky barrier potential; minimum contact resistivities; n-type InAs; p-type InAs; specific contact resistivity; transmission probability; Charge carrier processes; Conductivity; Indium gallium arsenide; Indium phosphide; Metals; Ohmic contacts; Schottky barriers; Contact resistivity; Landauer limit; Schottky barrier; metal semiconductor junctions; transmission probability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2012 International Conference on
Conference_Location :
Santa Barbara, CA
ISSN :
1092-8669
Print_ISBN :
978-1-4673-1725-2
Type :
conf
DOI :
10.1109/ICIPRM.2012.6403356
Filename :
6403356
Link To Document :
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