DocumentCode
587841
Title
Phase characterization of intermodulation distortion in high-linearity photodiodes
Author
Yang Fu ; Huapu Pan ; Beling, Andreas ; Campbell, Joe
Author_Institution
Dept. of Electr. Eng., Univ. of Virginia, Charlottesville, VA, USA
fYear
2012
fDate
27-30 Aug. 2012
Firstpage
219
Lastpage
220
Abstract
We present a simple method to obtain both magnitude and phase information of intermodulation distortion (IMD) in photodiodes. The IMD3 of the high-linearity InGaAs/InP photodiode exhibits 180 degree phase changes around its zero crossings.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; intermodulation distortion; optical distortion; photodetectors; photodiodes; IMD3; InGaAs-InP; high-linearity photodiodes; intermodulation distortion; magnitude information; phase changes; phase characterization; phase information; zero crossings; Distortion measurement; Frequency measurement; Intermodulation distortion; Optical attenuators; Phase measurement; Photodiodes; Photonics;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials (IPRM), 2012 International Conference on
Conference_Location
Santa Barbara, CA
ISSN
1092-8669
Print_ISBN
978-1-4673-1725-2
Type
conf
DOI
10.1109/ICIPRM.2012.6403362
Filename
6403362
Link To Document