Title :
High speed AlInGaAs/InGaAs quantum well waveguide photodiode for wavelengths around 2 microns
Author :
Hua Yang ; Nan Ye ; Manganaro, Marina ; Gocalinska, A. ; Thomas, Kevin ; Pelucchi, E. ; Roycroft, B. ; Peters, F.H. ; Corbett, Brandon
Author_Institution :
Tyndall Nat. Inst., Cork, Ireland
Abstract :
A high speed waveguide photodiode fabricated with AlInGaAs/InGaAs multiple quantum wells for 2 micron wavelength detection is reported. The fabricated photodiode shows a photoresponsivity of 0.3 A/W at around 2μm wavelength and a 3 dB bandwidth around 7 GHz.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical communication equipment; optical fabrication; optical waveguides; photodetectors; photodiodes; quantum well devices; semiconductor quantum wells; AlInGaAs-InGaAs; high speed quantum well waveguide photodiode; micron wavelength detection; multiple quantum wells; photoresponsivity; wavelength 2 micron; Indium gallium arsenide; Indium phosphide; Optical device fabrication; Optical fiber communication; Optical fibers; Photodiodes; 2ém wavelength; AlInGaAs/InGaAs; Photodiode; high speed; optical communication; quantum well;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2012 International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4673-1725-2
DOI :
10.1109/ICIPRM.2012.6403363
