Radial InP/InAsP quantum wells with high arsenic compositions on wurtzite-InP nanowires in the 1.3-µm region

Author

Kawaguchi, Kentaro ; Nakata, Y. ; Ekawa, M. ; Yamamoto, Takayuki ; Arakawa, Yasuhiko

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

2012

fDate

27-30 Aug. 2012

Firstpage

257

Lastpage

260

Abstract

Wurtzite (WZ) InP nanowires (NWs) with radial InP/InAsP quantum wells (QWs) having an arsenic composition in the rage of 0.43-0.60 were grown using metalorganic vapor phase epitaxy, and their optical properties were investigated. These InAsP QW layers with a high arsenic content and WZ crystal phase were successfully grown using WZ-InP NWs whose crystalline structure was controlled by sulphur doping. Photoluminescence (PL) of individual NWs with radial InP/InAsP QWs was clearly observed at room temperature. The PL wavelengths were successfully controlled by adjusting the radial QW thickness and arsenic composition of InAsP, and emissions in the 1.3-μm region were demonstrated.

Keywords

III-V semiconductors; MOCVD; arsenic compounds; crystal structure; doping; indium compounds; nanowires; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; InP-InAsP; PL wavelengths; QW layers; crystal phase; crystalline structure; high arsenic compositions; high arsenic content; metalorganic vapor phase epitaxy; optical properties; photoluminescence; radial QW thickness; radial quantum wells; sulphur doping; temperature 293 K to 298 K; wavelength 1.3 mum; wurtzite nanowires; Crystals; Epitaxial growth; Gold; Indium phosphide; Nanowires; Photoluminescence; Substrates; InP nanowire; radial InP/InAsP quantum well; wurtzite crystal;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2012 International Conference on

Conference_Location

Santa Barbara, CA

ISSN

1092-8669

Print_ISBN

978-1-4673-1725-2

Type

conf

DOI

10.1109/ICIPRM.2012.6403372

Filename

6403372