• DocumentCode
    588135
  • Title

    Group IV TFETs for very low power applications

  • Author

    Hsu-Yu Chang ; Woo, J.C.S.

  • Author_Institution
    Dept. of Electr. Eng., UCLA, Los Angeles, CA, USA
  • fYear
    2012
  • fDate
    9-10 Oct. 2012
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Novel source pocket Si Tunnel field effect transistor (TFET) is successfully fabricated by laser annealing. It shows reduced threshold voltage, steep subthreshold swing (46mV/dec), excellent ION/IOFF ratio (>;107) and improved output characteristics due to dramatic reduction of tunneling resistance.
  • Keywords
    field effect transistors; laser beam annealing; low-power electronics; silicon; tunnel transistors; Si; group IV TFET; laser annealing; output characteristics; source pocket silicon tunnel field effect transistor; tunneling resistance reduction; very low power application; Annealing; Lasers; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Subthreshold Microelectronics Conference (SubVT), 2012 IEEE
  • Conference_Location
    Waltham, MA
  • Print_ISBN
    978-1-4673-1586-9
  • Type

    conf

  • DOI
    10.1109/SubVT.2012.6404326
  • Filename
    6404326
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=588135