DocumentCode :
588135
Title :
Group IV TFETs for very low power applications
Author :
Hsu-Yu Chang ; Woo, J.C.S.
Author_Institution :
Dept. of Electr. Eng., UCLA, Los Angeles, CA, USA
fYear :
2012
fDate :
9-10 Oct. 2012
Firstpage :
1
Lastpage :
1
Abstract :
Novel source pocket Si Tunnel field effect transistor (TFET) is successfully fabricated by laser annealing. It shows reduced threshold voltage, steep subthreshold swing (46mV/dec), excellent ION/IOFF ratio (>;107) and improved output characteristics due to dramatic reduction of tunneling resistance.
Keywords :
field effect transistors; laser beam annealing; low-power electronics; silicon; tunnel transistors; Si; group IV TFET; laser annealing; output characteristics; source pocket silicon tunnel field effect transistor; tunneling resistance reduction; very low power application; Annealing; Lasers; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Subthreshold Microelectronics Conference (SubVT), 2012 IEEE
Conference_Location :
Waltham, MA
Print_ISBN :
978-1-4673-1586-9
Type :
conf
DOI :
10.1109/SubVT.2012.6404326
Filename :
6404326
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=588135
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