First demonstration of threshold voltage control by sub-1V back-gate biasing for thin body and buried-oxide (TBB) Ge-on-insulator (GOI) MOSFETs for low-power operation

Author

Ikeda, Ken-ichi ; Moriyama, Y. ; Ono, M. ; Kamimuta, Y. ; Irisawa, T. ; Kamata, Yukio ; Sakai, Akihiko ; Tezuka, Taro

Author_Institution

Collaborative Res. Team Green Nanoelectron. Center (GNC), Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan

fYear

2012

fDate

1-4 Oct. 2012

Firstpage

1

Lastpage

2

Abstract

For the first time, fabrication of TBB-GOI MOSFETs and substantial Vth shifts within 1V back biasing have been demonstrated. The Vth control by extremely low back-gate biases was achieved by using the EOT-scaled BOX structure of ~12nm. This sub-1V back-gate biasing scheme can reduce the power consumption in LSIs without optional voltage supply or charge pump circuits which have large impact to reducing chip size and process cost.

Keywords

MOSFET; elemental semiconductors; germanium; large scale integration; low-power electronics; silicon-on-insulator; voltage control; EOT-scaled BOX structure; Ge; LSI; buried-oxide germanium-on-insulator MOSFET; chip size reduction; extremely low back-gate biases SCHEME; low-power operation; power consumption; thin body TBB GOI MOSFET fabrication; threshold voltage control demonstration; Aluminum oxide; Fabrication; Hafnium compounds; Logic gates; MOSFETs; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference (SOI), 2012 IEEE International

Conference_Location

NAPA, CA

ISSN

1078-621X

Print_ISBN

978-1-4673-2690-2

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2012.6404354

Filename

6404354