Title :
First demonstration of threshold voltage control by sub-1V back-gate biasing for thin body and buried-oxide (TBB) Ge-on-insulator (GOI) MOSFETs for low-power operation
Author :
Ikeda, Ken-ichi ; Moriyama, Y. ; Ono, M. ; Kamimuta, Y. ; Irisawa, T. ; Kamata, Yukio ; Sakai, Akihiko ; Tezuka, Taro
Author_Institution :
Collaborative Res. Team Green Nanoelectron. Center (GNC), Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
Abstract :
For the first time, fabrication of TBB-GOI MOSFETs and substantial Vth shifts within 1V back biasing have been demonstrated. The Vth control by extremely low back-gate biases was achieved by using the EOT-scaled BOX structure of ~12nm. This sub-1V back-gate biasing scheme can reduce the power consumption in LSIs without optional voltage supply or charge pump circuits which have large impact to reducing chip size and process cost.
Keywords :
MOSFET; elemental semiconductors; germanium; large scale integration; low-power electronics; silicon-on-insulator; voltage control; EOT-scaled BOX structure; Ge; LSI; buried-oxide germanium-on-insulator MOSFET; chip size reduction; extremely low back-gate biases SCHEME; low-power operation; power consumption; thin body TBB GOI MOSFET fabrication; threshold voltage control demonstration; Aluminum oxide; Fabrication; Hafnium compounds; Logic gates; MOSFETs; Silicon; Substrates;
Conference_Titel :
SOI Conference (SOI), 2012 IEEE International
Conference_Location :
NAPA, CA
Print_ISBN :
978-1-4673-2690-2
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2012.6404354
