Taking the next step on advanced HKMG SOI technologies — From 32nm PD SOI volume production to 28nm FD SOI and beyond

Author

Horstmann, M. ; Hoentschel, J. ; Schaeffer, Jonathan

Author_Institution

Globalfoundries Dresden, Dresden, Germany

fYear

2012

fDate

1-4 Oct. 2012

Firstpage

1

Lastpage

2

Abstract

A foundry´s mission is to deliver competitive device performance and flexibility to support a variety of SoC offerings. The restrictive lithography and process requirements at the 20nm technology limit harvesting the density and scaling benefits of the gate first approach and drive the concept change to gate last processing. This technology pushes conventional scaling to its challenging limits. Beyond 20nm new device concepts need to be employed where FinFETs and ET-SOI devices serving well candidates for new advanced CMOS technologies.

Keywords

CMOS integrated circuits; MOSFET; high-k dielectric thin films; silicon-on-insulator; ET-SOI devices; FD SOI; FinFET; PD SOI volume production; SoC; advanced CMOS technology; advanced HKMG SOI technology; gate first approach; gate last processing; high-k-metal gate technology; size 20 nm; size 32 nm to 28 nm; system-on-chip; CMOS integrated circuits; FinFETs; Foundries; Logic gates; Silicon on insulator technology; System-on-a-chip;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference (SOI), 2012 IEEE International

Conference_Location

NAPA, CA

ISSN

1078-621X

Print_ISBN

978-1-4673-2690-2

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2012.6404364

Filename

6404364