DocumentCode :
588151
Title :
Improving the accuracy of numerically controlled sacrificial plasma oxidation using array of electrodes to improve the thickness uniformity of SOI
Author :
Takei, H. ; Yoshinaga, Koji ; Sano, Yousuke ; Matsuyama, S. ; Yamauchi, Kazuto
Author_Institution :
Grad. Sch. of Eng., Osaka Univ., Suita, Japan
fYear :
2012
fDate :
1-4 Oct. 2012
Firstpage :
1
Lastpage :
2
Abstract :
The processing accuracy was improved by balancing out the wafer temperature using the cooling system and regulating the rf power by constantly measuring the electrode potential during processing.
Keywords :
MOSFET; cooling; electrodes; numerical control; oxidation; plasma applications; silicon-on-insulator; RF power; SOI; cooling system; electrode array; electrode potential; fully depleted SOI MOSFET; numerically controlled sacrificial plasma oxidation; thickness uniformity; wafer temperature; Arrays; Atmospheric measurements; Cooling; Electrodes; Oxidation; Plasmas; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference (SOI), 2012 IEEE International
Conference_Location :
NAPA, CA
ISSN :
1078-621X
Print_ISBN :
978-1-4673-2690-2
Electronic_ISBN :
1078-621X
Type :
conf
DOI :
10.1109/SOI.2012.6404382
Filename :
6404382
Link To Document :
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