Monolithic 2.5kV RMS, 1.8V–3.3V dual-channel 640Mbps digital isolator in 0.5μm SOS

Author

Moghe, Y. ; Terry, A. ; Luzon, D.

Author_Institution

Silanna Group Pty Ltd., Eight Mile Plains, QLD, Australia

fYear

2012

fDate

1-4 Oct. 2012

Firstpage

1

Lastpage

2

Abstract

In this paper we describe a dual-channel, monolithic, capacitive digital isolator on 0.5μm SOS, with a measured single-channel maximum speed of 640Mbps at 3.3V supply -more than 2X better than all previously reported commercial and academic literature. We report 1.8V-compatible operation for the first time, achieving a top speed of 260Mbps; which exceeds the 3.3V performance of all previously reported designs. Current draw (85μA/Mbps at 3.3V) and galvanic isolation level (2.5kV RMS) are competitive with commercial offerings.

Keywords

digital circuits; microwave isolators; sapphire; silicon-on-insulator; SOS; bit rate 260 Mbit/s; bit rate 640 Mbit/s; current 85 muA; dual-channel digital isolator; galvanic isolation level; monolithic RMS; monolithic capacitive digital isolator; silicon-on-sapphire; size 0.5 mum; voltage 1.8 V to 3.3 V; voltage 2.5 kV; CMOS integrated circuits; CMOS technology; Capacitors; Current measurement; Isolators; Latches; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference (SOI), 2012 IEEE International

Conference_Location

NAPA, CA

ISSN

1078-621X

Print_ISBN

978-1-4673-2690-2

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2012.6404389

Filename

6404389