DocumentCode
588156
Title
Performance analysis and optimization for silicon interposer with Through Silicon Via (TSV)
Author
Namhoon Kim ; Changhwan Shin ; Wu, Dalei ; Joong-Ho Kim ; Wu, Po-Han
Author_Institution
Xilinx, Inc., San Jose, CA, USA
fYear
2012
fDate
1-4 Oct. 2012
Firstpage
1
Lastpage
2
Abstract
In this paper, the stacked silicon interconnect technology in FPGA system is introduced, which needs to be accurately modelled over high frequency by considering numerous design requirements. The stacked silicon interposer includes a lot of TSVs for high speed signals. Designs without the consideration of high frequency effects of TSV will degrade the rise/fall time of a signal, increase crosstalk and noise injection, and cause significant performance degradation on high speed channels. The routing metal loss in Under Bump Metallurgy (UBM) layer is also analyzed and simulated. Performance enhancement by using SOI wafer is shown and compared against conventional wafers.
Keywords
circuit optimisation; crosstalk; elemental semiconductors; field programmable gate arrays; integrated circuit interconnections; integrated logic circuits; silicon; three-dimensional integrated circuits; FPGA system; Si; TSV; UBM layer; crosstalk; high speed signals; noise injection; routing metal loss; stacked silicon interconnect technology; stacked silicon interposer optimization; through silicon via; under bump metallurgy; Capacitance; Field programmable gate arrays; Metals; Routing; Silicon; Substrates; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference (SOI), 2012 IEEE International
Conference_Location
NAPA, CA
ISSN
1078-621X
Print_ISBN
978-1-4673-2690-2
Electronic_ISBN
1078-621X
Type
conf
DOI
10.1109/SOI.2012.6404390
Filename
6404390
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