Title :
Ultrafast Electrically Pumped VECSELs
Author :
Pallmann, W.P. ; Zaugg, C.A. ; Mangold, M. ; Dahhan, I. ; Golling, M. ; Tilma, B.W. ; Witzigmann, Bernd ; Keller, Ulrich
Author_Institution :
Dept. of Phys., ETH Zurich, Zurich, Switzerland
Abstract :
We present an improved design for electrically pumped vertical external-cavity surface-emitting lasers (EP-VECSELs) optimized for passive modelocking with a semiconductor saturable absorber mirror (SESAM). In continuous-wave (cw) multimode operation, up to 170 mW of output power are demonstrated at a wavelength of 967 nm. Overcoming our prior limitation, we demonstrate fundamental transverse mode operation with 26 mW of average output power. Passively modelocking one of the fabricated EP-VECSELs with a quantum-well SESAM, we have achieved 6.3-ps pulses with an average output power of 6.2 mW at 1.46-GHz repetition rate, the shortest pulse duration from this type of laser to date. With slightly longer pulses of 7.3 ps, an average output power of 13 mW is obtained. Tradeoffs for further output power scaling and reduced pulse duration are discussed.
Keywords :
laser beams; laser cavity resonators; laser mirrors; laser mode locking; optical fabrication; optical pumping; optical saturable absorption; semiconductor lasers; semiconductor quantum wells; surface emitting lasers; EP-VECSEL; average output power scaling; continuous-wave multimode operation; cw multimode operation; frequency 1.46 GHz; fundamental transverse mode operation; passive mode locking; power 13 mW; power 170 mW; power 26 mW; power 6.2 mW; pulse duration; quantum-well SESAM; repetition rate; semiconductor saturable absorber mirror; time 6.3 ps; time 7.3 ps; ultrafast electrically pumped vertical external-cavity surface-emitting lasers; wavelength 967 nm; Cavity resonators; Heating; Laser modes; Power generation; Temperature measurement; Vertical cavity surface emitting lasers; Infrared lasers; diode lasers; modelocked lasers; semiconductor lasers; ultrafast lasers;
Journal_Title :
Photonics Journal, IEEE
DOI :
10.1109/JPHOT.2013.2274773