DocumentCode
58839
Title
Memristive Properties of Transparent 
Thin Films Deposited on ITO Glass at Room Temperature
Author
Dong-Qing Liu ; Hai-Feng Cheng ; Guang Wang ; Xuan Zhu ; Zheng-Zheng Shao ; Nan-Nan Wang ; Chao-Yang Zhang
Author_Institution
Sci. & Technol. on Adv. Ceramic Fibers & Composites Lab., Nat. Univ. of Defense Technol., Changsha, China
Volume
34
Issue
12
fYear
2013
fDate
Dec. 2013
Firstpage
1506
Lastpage
1508
Abstract
Amorphous La1-xSrxMnO3 (a-LSMO) thin films were deposited on indium tin oxide (ITO) glass at room temperature by radio frequency magnetron sputtering. The transmittance of a-LSMO (10 nm)/ITO/glass is 75% at 600 nm, which is promising for transparent memristors. The Ag/a-LSMO (10 nm)/ITO/glass memristor exhibits nonvolatile bipolar resistive switching properties with a resistance ratio , stable write/erase endurance , and long retention. The memristor can exhibit pinched hysteresis loops under high-frequency voltage excitations. These memristive properties are ascribed to diameter changes of the Ag nanofilament in the a-LSMO.
Keywords
glass; indium compounds; lanthanum compounds; memristors; random-access storage; silver; sputter deposition; strontium compounds; thin films; Ag; Ag nanofilament; ITO; ITO glass; La1-xSrxMnO3; amorphous a-LSMO thin films; high-frequency voltage excitations; hysteresis loops; indium tin oxide; memristive properties; nonvolatile bipolar resistive switching properties; radiofrequency magnetron sputtering; transparent memristors; transparent thin films; Glass; Indium tin oxide; Lanthanum compounds; Memristors; Resistance; Sputtering; Thin films; ${rm La}_{1hbox{-}x}{rm Sr}_{x}{rm MnO}_{3}$ (LSMO); Amorphous thin films; indium tin oxide; memristor; transparent electronics;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2013.2284927
Filename
6637043
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