A low power CMOS receiver front-end for long term evolution systems

Author

Kuang-Hao Lin ; Tai-Hsuan Yang ; Jan-Dong Tseng

Author_Institution

Dept. of Electron. Eng., Nat. Chin-Yi Univ. of Technol., Taichung, Taiwan

fYear

2012

fDate

4-7 Nov. 2012

Firstpage

439

Lastpage

442

Abstract

This paper presents a low power CMOS RF front-end with a low noise amplifier (LNA) and mixer for long term evolution (LTE) direct conversion receiver. Noise figure and linearity are key parameter of LTE receiver front-end. The source inductive degeneration LNA is designed achieving matched input impedance over a wide bandwidth. For low power consumption issue, a direct conversion receiver with LNA and mixer employ folded-cascode architecture. The receiver front-end operates from 2545 to 2700 MHz covering frequency band 7 of LTE standard. The front-end achieves 8.89 dB conversion gain, 8.25 dB NF, -9.5 dBm IIP3, -17 dBm P1dB and 3.12 mW power consumption. All the circuits are designed in 0.18 μm CMOS process with 1.2V supply voltage.

Keywords

CMOS integrated circuits; Long Term Evolution; low noise amplifiers; low-power electronics; mixers (circuits); radio receivers; CMOS process; LTE receiver front-end; LTE standard; direct conversion receiver; folded-cascode architecture; frequency 2545 MHz to 2700 MHz; gain 8.89 dB; long term evolution systems; low noise amplifier; low power CMOS receiver front-end; matched input impedance; mixer; noise figure; noise figure 8.25 dB; power 3.12 mW; size 0.18 mum; source inductive degeneration; voltage 1.2 V; 1f noise; CMOS integrated circuits; Gain; Mixers; Power demand; Radio frequency; Receivers; front-end; long term evolution (LTE); low noise amplify (LNA); mixer; radio frequency (RF); receiver;

fLanguage

English

Publisher

ieee

Conference_Titel

SoC Design Conference (ISOCC), 2012 International

Conference_Location

Jeju Island

Print_ISBN

978-1-4673-2989-7

Electronic_ISBN

978-1-4673-2988-0

Type

conf

DOI

10.1109/ISOCC.2012.6406890

Filename

6406890