Title :
Temperature-aware energy minimization of 3D-stacked L2 DRAM cache through DVFS
Author :
Woojin Yun ; Jongpil Jung ; Kyungsu Kang ; Chong-Min Kyung
Author_Institution :
Dept. of EE, KAIST, Daejeon, South Korea
Abstract :
Three-dimensional (3D) memory stacking is one of the most promising applications in 3D integration to solve the limited memory bandwidth problem in 2D integrated circuits (ICs). However, the high power density, i.e., power dissipation per unit volume, due to the high integration density of 3D ICs may incur high operating temperature and, thus, causes low reliability as well as high power consumption. In this paper, we describes the effects of temperature, supply voltage, and L2 cache access rate on both power consumption and reliability of 3D-stacked L2 DRAM cache. Also, we propose a dynamic voltage and frequency scaling (DVFS) scheme for 3D-stacked L2 DRAM cache which can be adapted to either each cache bank or each group of cache banks while taking account of both error-rate and temperature-induced power consumption. Experimental results show that the proposed DVFS scheme achieved a reduction of energy consumption by up to 21.5% compared to a conventional scheme under a given error-rate constraint.
Keywords :
DRAM chips; cache storage; integrated circuit reliability; power aware computing; three-dimensional integrated circuits; 2D integrated circuit; 3D IC; 3D integration; 3D-stacked L2 DRAM cache; DVFS; L2 cache access rate; dynamic voltage and frequency scaling; energy consumption; error-rate constraint; high power density; limited memory bandwidth problem; power dissipation; reliability; supply voltage; temperature-aware energy minimization; temperature-induced power consumption; three-dimensional memory stacking; Barium; Random access memory; Reliability;
Conference_Titel :
SoC Design Conference (ISOCC), 2012 International
Conference_Location :
Jeju Island
Print_ISBN :
978-1-4673-2989-7
Electronic_ISBN :
978-1-4673-2988-0
DOI :
10.1109/ISOCC.2012.6406899