NP dynamic CMOS resurrection with carbon nanotube field effect transistors

Author

Yanan Sun ; Kursun, V.

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

fYear

2012

fDate

4-7 Nov. 2012

Firstpage

13

Lastpage

16

Abstract

Low-power, compact, and high-performance NP dynamic CMOS circuits implemented with a 16nm carbon nanotube transistor technology are presented in this paper. The performances of NP dynamic CMOS full adders based on 16nm carbon nanotube MOSFETs (CN-MOSFETs) and 16nm conventional silicon MOSFETs (Si-MOSFETs) are compared. The dynamic switching power consumption, the leakage power consumption, and the total area are reduced by 53.38%, 95.10%, and 68.96%, respectively, with the CN-MOSFET technology while providing similar propagation delay as compared to the Si-MOSFET NP dynamic CMOS full adder.

Keywords

CMOS integrated circuits; MOSFET; adders; carbon nanotube field effect transistors; elemental semiconductors; silicon; CMOS full adders; CN-MOSFET; NP dynamic CMOS circuit; Si; Si-MOSFET; carbon nanotube MOSFET; carbon nanotube field effect transistor; dynamic switching power consumption; leakage power consumption; propagation delay; silicon MOSFET; size 16 nm; Adders; CMOS integrated circuits; CMOS technology; Carbon nanotubes; Logic gates; Power demand; Transistors; NP dynamic CMOS; carbon nanotube transistor technology; electron mobility; high performance; hole mobility; low power;

fLanguage

English

Publisher

ieee

Conference_Titel

SoC Design Conference (ISOCC), 2012 International

Conference_Location

Jeju Island

Print_ISBN

978-1-4673-2989-7

Electronic_ISBN

978-1-4673-2988-0

Type

conf

DOI

10.1109/ISOCC.2012.6406913

Filename

6406913