Circuit design for carbon nanotube field effect transistors

Carbon nanotube field-effect transistors (CNFETs) and more recently graphene FETs are currently being researched as a replacement of CMOS in the near future due to their physical characteristics such as achievable current density, high speed, high-K compatibility, chemical stability, and low short channel effects. Historically, we have seen many cases that new devices disappeared because of the lack of design methodology for large scale integration (LSI). In this tutorial paper, we introduce circuit integration schemes by using CNFETs for future LSI design.