• DocumentCode
    58972
  • Title

    540-meV Hole Activation Energy for GaSb/GaAs Quantum Dot Memory Structure Using AlGaAs Barrier

  • Author

    Cui, K. ; Ma, Wann-Jiun ; Zhang, Ye ; Huang, Jie ; Wei, Y. ; Cao, Yijia ; Guo, Xuemei ; Li, Qifeng

  • Author_Institution
    Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
  • Volume
    34
  • Issue
    6
  • fYear
    2013
  • fDate
    Jun-13
  • Firstpage
    759
  • Lastpage
    761
  • Abstract
    We report on a memory structure that only makes use of holes as the storage charges based on type-II GaSb/GaAs quantum dots (QDs) using an AlGaAs barrier. The C\\hbox {--}V measurements confirm existence of quantum states in the GaSb dots and reveal the applied bias voltage range for the write/erase process by charging/discharging the QDs. A large hole activation energy value of 540 meV is obtained for the device measured by deep level transient spectroscopy. Our results indicate that type-II GaSb/GaAs QD system is a promising candidate for future memory devices.
  • Keywords
    Barrier confinement; GaSb/GaAs; quantum dot memory; thermal activation energy;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2013.2258135
  • Filename
    6515616
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=58972