Title :
2D simulation of a SiGe HBT based on energy balance model
Author :
Xiaolong Wu ; Zhengwei Du
Author_Institution :
Dept. of Electron. Eng., Tsinghua Univ. Beijing, Beijing, China
Abstract :
An implementation of the energy balance (EB) model is presented to describe energy transport in heterostructure transistors in this paper. As an application, a 2D simulation of a SiGe heterostructure bipolar transistor (HBT) is carried out. Some typical numerical results are presented, such as the I-V curve, distribution of electron density, current density and electron temperature, etc. Compared with the classical drift diffusion (DD) model, the EB model gives more accurate results at the cost of time and space complexity.
Keywords :
Ge-Si alloys; current density; electron density; heterojunction bipolar transistors; semiconductor materials; 2D simulation; DD model; EB model; I-V curve; SiGe; classical drift diffusion model; current density; electron density distribution; electron temperature; energy balance model; energy transport; heterostructure bipolar transistor; heterostructure transistors; silicon germanium HBT; space complexity; time complexity; Equations; Heterojunction bipolar transistors; Mathematical model; Numerical models; Poisson equations; Semiconductor process modeling; Silicon germanium;
Conference_Titel :
Antennas, Propagation & EM Theory (ISAPE), 2012 10th International Symposium on
Conference_Location :
Xian
Print_ISBN :
978-1-4673-1799-3
DOI :
10.1109/ISAPE.2012.6408950
