DocumentCode :
590147
Title :
A compact UWB BPF design using silicon-based IPD technology
Author :
Xuejuan Zhang ; Wenjuan Zhang ; Liguo Sun ; Lu Huang
Author_Institution :
Dept. of Inf. Sci. & Technol., Univ. of Sci. & Technol. of China, Hefei, China
fYear :
2012
fDate :
22-26 Oct. 2012
Firstpage :
1245
Lastpage :
1247
Abstract :
Band pass filter (BPF) is widely used in the front end of ultra wide band (UWB) system. The miniaturization for the BPF is needed greatly in order to reduce the size and the cost. In this paper we present a compact BPF which is made by using integrated passive device (IPD) technology in high resistance silicon substrate. The filter can achieve the similar performance with smaller size comparing to traditional technologies such as PCB or LTCC. The size of the filter is only 1.53mm×1.09mm. The in-band insertion loss is less than 0.3dB at 7.656GHz with 528MHz bandwidth. Out-band attenuations are more than 20dB in both 6.956GHz and 8.356GHz. Out-band attenuations are more than 20dB in both 6.956GHz and 8.356GHz.
Keywords :
band-pass filters; elemental semiconductors; microwave filters; silicon; IPD technology; LTCC; PCB; Si; band pass filter; bandwidth 528 MHz; compact UWB BPF design; frequency 6.956 GHz; frequency 7.656 GHz; frequency 8.356 GHz; high resistance substrate; integrated passive device technology; ultra wideband system; Band pass filters; Capacitors; Circuit synthesis; Inductors; Layout; Microwave filters; Silicon; IPD technology; UWB; filter;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Antennas, Propagation & EM Theory (ISAPE), 2012 10th International Symposium on
Conference_Location :
Xian
Print_ISBN :
978-1-4673-1799-3
Type :
conf
DOI :
10.1109/ISAPE.2012.6409005
Filename :
6409005
Link To Document :
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