A compact UWB BPF design using silicon-based IPD technology

Author

Xuejuan Zhang ; Wenjuan Zhang ; Liguo Sun ; Lu Huang

Author_Institution

Dept. of Inf. Sci. & Technol., Univ. of Sci. & Technol. of China, Hefei, China

fYear

2012

fDate

22-26 Oct. 2012

Firstpage

1245

Lastpage

1247

Abstract

Band pass filter (BPF) is widely used in the front end of ultra wide band (UWB) system. The miniaturization for the BPF is needed greatly in order to reduce the size and the cost. In this paper we present a compact BPF which is made by using integrated passive device (IPD) technology in high resistance silicon substrate. The filter can achieve the similar performance with smaller size comparing to traditional technologies such as PCB or LTCC. The size of the filter is only 1.53mm×1.09mm. The in-band insertion loss is less than 0.3dB at 7.656GHz with 528MHz bandwidth. Out-band attenuations are more than 20dB in both 6.956GHz and 8.356GHz. Out-band attenuations are more than 20dB in both 6.956GHz and 8.356GHz.

Keywords

band-pass filters; elemental semiconductors; microwave filters; silicon; IPD technology; LTCC; PCB; Si; band pass filter; bandwidth 528 MHz; compact UWB BPF design; frequency 6.956 GHz; frequency 7.656 GHz; frequency 8.356 GHz; high resistance substrate; integrated passive device technology; ultra wideband system; Band pass filters; Capacitors; Circuit synthesis; Inductors; Layout; Microwave filters; Silicon; IPD technology; UWB; filter;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas, Propagation & EM Theory (ISAPE), 2012 10th International Symposium on

Conference_Location

Xian

Print_ISBN

978-1-4673-1799-3

Type

conf

DOI

10.1109/ISAPE.2012.6409005

Filename

6409005