• DocumentCode
    590151
  • Title

    Full-controlled devices and SCR consisting of the mixed H bridge switch circuit

  • Author

    Lin Xin

  • Author_Institution
    PLA Inf. Eng. Univ., Zhengzhou, China
  • fYear
    2012
  • fDate
    22-26 Oct. 2012
  • Firstpage
    1264
  • Lastpage
    1266
  • Abstract
    Usually the H bridge switch circuits of four power switches are all the full-controlled devices, where two of them are the low-end switched and two as the high-end switches. The low-end switch driver is simpler, and the high-end switch driver is relatively complicated. In this paper, a kind of use full-controlled devices and SCR consists of a mix of H bridge switch circuit was presented, in which, the low-end switches use full-controlled devices, high-end switches use SCR. Using SCR conductive self-locking characteristics, this H bridge switch circuit can make the high-end switch driver also became very simple, so simplify the H bridge driving circuit.
  • Keywords
    driver circuits; power semiconductor switches; thyristors; H-bridge driving circuit; SCR; SCR conductive self-locking characteristics; full-controlled devices; high-end switches; low-end switch driver; mixed H bridge switch circuit; power switches; Bridge circuits; MOSFET circuits; Switches; Switching circuits; Thyristors; Voltage control; H bridge switch circuit full-controlled devices; SCR; thyristor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Antennas, Propagation & EM Theory (ISAPE), 2012 10th International Symposium on
  • Conference_Location
    Xian
  • Print_ISBN
    978-1-4673-1799-3
  • Type

    conf

  • DOI
    10.1109/ISAPE.2012.6409010
  • Filename
    6409010