Title :
DC breakdown and TDDB study of ALD SiO2 on GaN
Author :
Takashima, Sachio ; Zhongda Li ; Chow, T.P.
Author_Institution :
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
Dielectric and MOS interface properties of SiO2 deposited with atomic layer deposition (ALD) on GaN with several surface treatment and oxide structures have been investigated via DC measurements. ALD SiO2 on dry etch + NaOH-treated GaN surface exhibited higher breakdown voltage with small distribution, larger barrier height characteristic, and higher charge to breakdown characteristics when compared with un-etched surface condition and dry + TMAH wet etched surface condition, demonstrating the usability of NaOH post-etching treatment. Comparison was also made to a composite oxide of SiO2/Al2O3/SiO2, showing different trap-related leakage conduction.
Keywords :
III-V semiconductors; MOS capacitors; aluminium; atomic layer epitaxial growth; electric breakdown; electrical conductivity; etching; gallium compounds; silicon compounds; wide band gap semiconductors; Al-SiO2-GaN; DC breakdown; MOS interface properties; atomic layer deposition; barrier height; breakdown voltage; dielectric properties; dry etched surface; oxide structure; post-etching treatment; surface treatment; time dependent dielectric breakdown study; trap-related leakage conduction; un-etched surface; wet etched surface; Aluminum oxide; Capacitors; Electric breakdown; Electric fields; Gallium nitride; Reliability; Surface treatment; GaN; MOS; SiO2; TDDB; barrier height; breakdown;
Conference_Titel :
Lester Eastman Conference on High Performance Devices (LEC), 2012
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-2298-0
Electronic_ISBN :
978-1-4673-2300-0
DOI :
10.1109/lec.2012.6410987
