Title :
GaN-based light emitting diode with embedded SiO2 pattern for enhanced light extraction
Author :
Wenting Hou ; Liang Zhao ; Xiaoli Wang ; Shi You ; Detchprohm, Theeradetch ; Wetzel, Christian
Author_Institution :
Dept. of Phys., Appl. Phys., & Astron., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
The n-GaN layer of c-plane GaInN/GaN light emitting diodes (LEDs) on sapphire was modified to contain a pattern of SiO2 nanorods. This embedded pattern of 300 nm long rods and diameter of 200-400 nm was created by thermal agglomeration of a Ni mask layer and subsequent dry-etching. The light output power (LOP) and external quantum efficiency (EQE) of the resulting LEDs increased both by some 25% to 40% depending on current density over the unpatterned structure. The increase is thought to be primarily the result of enhanced light extraction efficiency induced by enhanced scattering at the substrate-side interface.
Keywords :
III-V semiconductors; current density; etching; gallium compounds; indium compounds; light emitting diodes; light scattering; masks; nanorods; silicon compounds; wide band gap semiconductors; Al2O3; EQE; GaInN-GaN-SiO2; LED; LOP; Ni mask layer; c-plane light emitting diodes; current density; dry-etching; efficiency 25 percent to 40 percent; embedded pattern; enhanced light extraction efficiency; enhanced scattering; external quantum efficiency; light output power; n-GaN layer; nanorods; rod diameter; sapphire; size 200 nm to 400 nm; substrate-side interface; thermal agglomeration; unpatterned structure; Epitaxial growth; Gallium nitride; Light emitting diodes; Lighting; Nickel; Power generation; Substrates; Ni self assembly; green light emitting diode; light extraction efficiency; nano-pattern n-GaN substrate;
Conference_Titel :
Lester Eastman Conference on High Performance Devices (LEC), 2012
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-2298-0
Electronic_ISBN :
978-1-4673-2300-0
DOI :
10.1109/lec.2012.6410988
