Title :
Performance of single-and dual-color detectors using InAs/GaSb strained layer superlattices
Author :
Plis, Elena ; Gautam, Nishit ; Klein, Bernhard ; Myers, S. ; Schuler-Sandy, T. ; Kutty, M.N. ; Tian, Z.-B. ; Krishna, Sanjay
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of New Mexico, Albuquerque, NM, USA
Abstract :
We report on a heterojunction band gap engineered single- and dual-color photodetectors with pBiBn and pBp architecture, respectively. The detailed optical and electrical characterization of these devices has been performed. The pBiBn detector demonstrated a specific detectivity of 3 × 1010 Jones at 8m wavelength and a specific detectivity of 5 × 1011 Jones and 2.6 × 1010 Jones for MWIR (at 5 μm) and LWIR (9 μm) absorbers, respectively, has been measured for dual-band pBp detector. Observed performance of unipolar barrier devices is superior to the performance of homojunction single-and dual-color detectors based on the same material system and operating at the same wavelength range.
Keywords :
electric sensing devices; gallium compounds; indium compounds; optical sensors; photodetectors; InAs-GaSb; electrical characterization; heterojunction band gap engineering; homojunction; homojunction dual-color photodetector; homojunction single-color photodetector; optical characterization; strained layer superlattice; wavelength 5 mum; wavelength 8 mum; wavelength 9 mum; Dark current; Detectors; Dual band; Performance evaluation; Photonic band gap; Superlattices; Wavelength measurement; InAs/GaSb; Strained Layer Superlattice; dual-band detector; mid-pBiBn; pBp;
Conference_Titel :
Lester Eastman Conference on High Performance Devices (LEC), 2012
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-2298-0
Electronic_ISBN :
978-1-4673-2300-0
DOI :
10.1109/lec.2012.6410998
