Third-order intermodulation distortion of the capacitive microwave power sensor using MEMS clamped beam

Author

Yan Cui ; Xiaoping Liao

Author_Institution

Key Lab. of MEMS of the Minist. of Educ., Southeast Univ., Nanjing, China

fYear

2012

fDate

28-31 Oct. 2012

Firstpage

1

Lastpage

3

Abstract

In this work, third-order intermodulation distortion (IMD3) of the GaAs micromachining capacitive microwave power sensor for X-band applications using MEMS clamped beam has been measured under two-tone microwave signal with the central frequency of 10GHz. The measurement results indicate that IMD3 powers are from -45dBm to -71dBm for the two-tone signal power of 1.2dBm with different frequency intervals (Δf). And for different two-tone signal powers with the fixed 1MHz Δf, the measured IMD3 powers are from -71.5dBm to -50.5dBm. These show its good IMD3 characteristic as the X-band power sensor.

Keywords

III-V semiconductors; capacitive sensors; gallium arsenide; intermodulation distortion; micromachining; microsensors; microwave detectors; microwave measurement; power measurement; power semiconductor devices; GaAs; IMD3; MEMS clamped beam; X-band application; frequency 1 MHz; frequency 10 GHz; micromachining capacitive microwave power sensor; third-order intermodulation distortion; two-tone microwave signal measurement; Frequency measurement; Gallium arsenide; Micromechanical devices; Microwave filters; Microwave measurements; Power measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2012 IEEE

Conference_Location

Taipei

ISSN

1930-0395

Print_ISBN

978-1-4577-1766-6

Electronic_ISBN

1930-0395

Type

conf

DOI

10.1109/ICSENS.2012.6411426

Filename

6411426