DocumentCode
590559
Title
Challenges in visible wavelength detection using optically transparent oxide semiconductors
Author
Sungsik Lee ; Nathan, Arokia ; Robertson, John
Author_Institution
London Center for Nanotechnol., Univ. Coll. London, London, UK
fYear
2012
fDate
28-31 Oct. 2012
Firstpage
1
Lastpage
4
Abstract
We discuss the development of amorphous oxide semiconductor technology for optical sensor applications. In particular, we discuss the challenges of detecting visible wavelengths using this family of materials, which are known to be optically transparent due to their relatively large bandgap energy. One of the main issues with amorphous oxide semiconductors (AOS) is the ionization of the oxygen vacancies (VO) under illumination. While this can be beneficial in terms of optical absorption and high photoconductive gain, it can give rise to persistent photoconductivity (PPC). We will present techniques to overcome the PPC, and discuss how to achieve the high photoconductive gain for image sensor applications.
Keywords
image sensors; light absorption; optical sensors; AOS; PPC; amorphous oxide semiconductor technology; image sensor applications; optical absorption; optical sensor applications; oxygen vacancy ionization; persistent photoconductivity; photoconductive gain; using optically transparent oxide semiconductors; visible wavelength detection; Acceleration; Charge carrier processes; Lighting; Logic gates; Spontaneous emission; Stress; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2012 IEEE
Conference_Location
Taipei
ISSN
1930-0395
Print_ISBN
978-1-4577-1766-6
Electronic_ISBN
1930-0395
Type
conf
DOI
10.1109/ICSENS.2012.6411471
Filename
6411471
Link To Document