• DocumentCode
    590559
  • Title

    Challenges in visible wavelength detection using optically transparent oxide semiconductors

  • Author

    Sungsik Lee ; Nathan, Arokia ; Robertson, John

  • Author_Institution
    London Center for Nanotechnol., Univ. Coll. London, London, UK
  • fYear
    2012
  • fDate
    28-31 Oct. 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We discuss the development of amorphous oxide semiconductor technology for optical sensor applications. In particular, we discuss the challenges of detecting visible wavelengths using this family of materials, which are known to be optically transparent due to their relatively large bandgap energy. One of the main issues with amorphous oxide semiconductors (AOS) is the ionization of the oxygen vacancies (VO) under illumination. While this can be beneficial in terms of optical absorption and high photoconductive gain, it can give rise to persistent photoconductivity (PPC). We will present techniques to overcome the PPC, and discuss how to achieve the high photoconductive gain for image sensor applications.
  • Keywords
    image sensors; light absorption; optical sensors; AOS; PPC; amorphous oxide semiconductor technology; image sensor applications; optical absorption; optical sensor applications; oxygen vacancy ionization; persistent photoconductivity; photoconductive gain; using optically transparent oxide semiconductors; visible wavelength detection; Acceleration; Charge carrier processes; Lighting; Logic gates; Spontaneous emission; Stress; Thin film transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensors, 2012 IEEE
  • Conference_Location
    Taipei
  • ISSN
    1930-0395
  • Print_ISBN
    978-1-4577-1766-6
  • Electronic_ISBN
    1930-0395
  • Type

    conf

  • DOI
    10.1109/ICSENS.2012.6411471
  • Filename
    6411471