Title :
Photoluminescence of single GaP/ZnO core-shell nanowires
Author :
Novak, Jiri ; Mikulics, M. ; Elias, Pablo ; Hasenohrl, S. ; Dujavova-Laurencikova, A. ; Vavra, I. ; Novotny, I. ; Kovac, J.
Author_Institution :
Inst. of Electr. Eng., Bratislava, Slovakia
Abstract :
GaP/ZnO core-shell nanowires were prepared by Metal Organic Vapour Phase Epitaxy and RF sputtering. We studied systematically room temperature photoluminescence of the NWs in the ultraviolet and green regions. Our study revealed that the UV peak position shifted slightly towards longer wavelengths while the green emission with the main transition at 2.25eV was almost unchanged.
Keywords :
II-VI semiconductors; III-V semiconductors; MOCVD; gallium compounds; nanowires; photoluminescence; sputter deposition; wide band gap semiconductors; zinc compounds; GaP-ZnO; Metal Organic Vapour Phase Epitaxy; RF sputtering; core-shell nanowire; photoluminescence; Annealing; Epitaxial growth; Green products; Photoluminescence; Sputtering; Substrates; Zinc oxide;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4673-1197-7
DOI :
10.1109/ASDAM.2012.6418584
