DocumentCode
591061
Title
Photoluminescence of single GaP/ZnO core-shell nanowires
Author
Novak, Jiri ; Mikulics, M. ; Elias, Pablo ; Hasenohrl, S. ; Dujavova-Laurencikova, A. ; Vavra, I. ; Novotny, I. ; Kovac, J.
Author_Institution
Inst. of Electr. Eng., Bratislava, Slovakia
fYear
2012
fDate
11-15 Nov. 2012
Firstpage
127
Lastpage
130
Abstract
GaP/ZnO core-shell nanowires were prepared by Metal Organic Vapour Phase Epitaxy and RF sputtering. We studied systematically room temperature photoluminescence of the NWs in the ultraviolet and green regions. Our study revealed that the UV peak position shifted slightly towards longer wavelengths while the green emission with the main transition at 2.25eV was almost unchanged.
Keywords
II-VI semiconductors; III-V semiconductors; MOCVD; gallium compounds; nanowires; photoluminescence; sputter deposition; wide band gap semiconductors; zinc compounds; GaP-ZnO; Metal Organic Vapour Phase Epitaxy; RF sputtering; core-shell nanowire; photoluminescence; Annealing; Epitaxial growth; Green products; Photoluminescence; Sputtering; Substrates; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on
Conference_Location
Smolenice
Print_ISBN
978-1-4673-1197-7
Type
conf
DOI
10.1109/ASDAM.2012.6418584
Filename
6418584
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