Title :
Optical Gain and Laser Characteristics of InGaN Quantum Wells on Ternary InGaN Substrates
Author :
Jing Zhang ; Tansu, N.
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Abstract :
The optical gain and threshold characteristics of InGaN quantum wells (QWs) on ternary InGaN substrate emitting in green and yellow spectral regimes are analyzed. By employing the ternary substrates, the material gains were found as ~ 3-5 times higher than that of conventional method with reduced wavelength shift. The threshold carrier density is reduced by ~ 15%-50% from the use of ternary substrate method for green- and yellow-emitting lasers.
Keywords :
III-V semiconductors; SCF calculations; band structure; carrier density; gallium compounds; indium compounds; k.p calculations; quantum well lasers; spectral line shift; visible spectra; wave functions; wide band gap semiconductors; InGaN; InGaN-InGaN; band structures; carrier screening effect; green spectral regimes; laser characteristics; material gains; optical gain; polarization fields; quantum well laser; reduced wavelength shift; self-consistent six-band k·p formalism; strain effect; ternary semiconductor substrate; threshold carrier density; valence band mixing; wave functions; wurtzite semiconductor; yellow spectral regimes; Charge carrier density; Gallium nitride; Green products; Optical polarization; Strain; Substrates; III-Nitride; InGaN quantum wells (QWs); laser diodes; optical gain; ternary InGaN substrate; threshold current;
Journal_Title :
Photonics Journal, IEEE
DOI :
10.1109/JPHOT.2013.2247587
