Optical Gain and Laser Characteristics of InGaN Quantum Wells on Ternary InGaN Substrates

Author

Jing Zhang ; Tansu, N.

Author_Institution

Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA

Volume

5

Issue

2

fYear

2013

fDate

Apr-13

Firstpage

2600111

Lastpage

2600111

Abstract

The optical gain and threshold characteristics of InGaN quantum wells (QWs) on ternary InGaN substrate emitting in green and yellow spectral regimes are analyzed. By employing the ternary substrates, the material gains were found as ~ 3-5 times higher than that of conventional method with reduced wavelength shift. The threshold carrier density is reduced by ~ 15%-50% from the use of ternary substrate method for green- and yellow-emitting lasers.

Keywords

III-V semiconductors; SCF calculations; band structure; carrier density; gallium compounds; indium compounds; k.p calculations; quantum well lasers; spectral line shift; visible spectra; wave functions; wide band gap semiconductors; InGaN; InGaN-InGaN; band structures; carrier screening effect; green spectral regimes; laser characteristics; material gains; optical gain; polarization fields; quantum well laser; reduced wavelength shift; self-consistent six-band k·p formalism; strain effect; ternary semiconductor substrate; threshold carrier density; valence band mixing; wave functions; wurtzite semiconductor; yellow spectral regimes; Charge carrier density; Gallium nitride; Green products; Optical polarization; Strain; Substrates; III-Nitride; InGaN quantum wells (QWs); laser diodes; optical gain; ternary InGaN substrate; threshold current;

fLanguage

English

Journal_Title

Photonics Journal, IEEE

Publisher

ieee

ISSN

1943-0655

Type

jour

DOI

10.1109/JPHOT.2013.2247587

Filename

6463418