Highly efficient dual-band power amplifier based on cascaded CMRCs

Author

Shichang Chen ; Quan Xue

Author_Institution

State Key Labs. of Millimeter Waves, City Univ. of Hong Kong, Kowloon, China

fYear

2012

fDate

4-7 Dec. 2012

Firstpage

367

Lastpage

369

Abstract

This paper reports a dual-band power amplifier (PA) with extended class-F configurations for two distinct frequency bands at 2.4 and 3.5 GHz. Multi-harmonic control circuit (M-HCC) is realized by incorporating two cascaded compact microstrip resonant cell (CMRC) and an open stub. The overall size of the M-HCC is greatly reduced compared with the conventional approaches. The implemented PA prototype based on Cree´s GaN HEMT CGH40010 demonstrates 71% and 63% power-added efficiency (PAE) values with 41.6 and 40.8 dBm saturation power for the two non-harmonic frequencies, respectively.

Keywords

III-V semiconductors; UHF power amplifiers; gallium compounds; high electron mobility transistors; microwave power amplifiers; wide band gap semiconductors; Cree HEMT CGH40010; GaN; M-HCC; PA prototype; PAE; cascaded CMRC; cascaded compact microstrip resonant cell; dual-band power amplifier; efficiency 63 percent; efficiency 71 percent; extended class-F configurations; multiharmonic control circuit; nonharmonic frequencies; open stub; power-added efficiency; Dual band; Gain; Harmonic analysis; Power amplifiers; Power generation; Power harmonic filters; Wireless communication; Class-F; compact microstrip resonant cell (CMRC); dual-band; power amplifier; power-added efficiency (PAE);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2012 Asia-Pacific

Conference_Location

Kaohsiung

Print_ISBN

978-1-4577-1330-9

Electronic_ISBN

978-1-4577-1331-6

Type

conf

DOI

10.1109/APMC.2012.6421600

Filename

6421600