A 2D analytical modeling approach for nanoscale strained-Si (s-Si) on silicon-germanium-on-insulator (SGOI) MOSFETs by evanescent mode analysis

Author

Kumar, Manoj ; Dubey, Souvik ; Jit, S. ; Tiwari, P.K.

Author_Institution

Dept. of Electron. Eng., Indian Inst. of Technol. (BHU), Varanasi, India

fYear

2012

fDate

28-29 Dec. 2012

Firstpage

449

Lastpage

452

Abstract

This paper presents a compact two-dimensional (2D) analytical model of short-channel strained-Si on SGOI MOSFETs. The channel potential is obtained by solving 2D Poisson´s equation using evanescent mode analysis. The analytical model takes into account the effects of all the device parameters along with Ge mole fraction in the relaxed SiGe layer on the subthreshold device characteristics. In addition, the threshold voltage and subthreshold slope, the key subthreshold physical parameters, are formulated by employing surface potential. For the validation of model, the model results have been compared with numerical simulation results from ATLAS™ by Silvaco.

Keywords

Ge-Si alloys; MOSFET; Poisson equation; silicon-on-insulator; 2D Poisson equation; 2D analytical modeling approach; ATLAS; SiGe; Silvaco; evanescent mode analysis; key subthreshold physical parameters; mole fraction; nanoscale strained on SGOI MOSFET; numerical simulation; relaxed layer; silicon-germanium-on-insulator; subthreshold device characteristics; subthreshold slope; surface potential; threshold voltage; two-dimensional analytical model; Decision support systems; Erbium; Intelligent systems; Silicon-Germanium-on-Insulator (SGOI); Strained-Si (s-Si); evanescent mode analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, Devices and Intelligent Systems (CODIS), 2012 International Conference on

Conference_Location

Kolkata

Print_ISBN

978-1-4673-4699-3

Type

conf

DOI

10.1109/CODIS.2012.6422235

Filename

6422235