DocumentCode :
59234
Title :
Deposition of High-Efficiency Microcrystalline Silicon Solar Cells Using SiF _{\\bf 4} /H _{\\bf 2}
Author :
Dornstetter, Jean-Christophe ; Kasouit, S. ; Roca i Cabarrocas, Pere
Author_Institution :
Gas & Power, Total S.A., Paris La Défense, France
Volume :
3
Issue :
1
fYear :
2013
fDate :
Jan. 2013
Firstpage :
581
Lastpage :
586
Abstract :
In this paper, we present results on microcrystalline silicon solar cells that are deposited from SiF4/H2/Ar mixtures, on which efficiencies exceeding 9% have already been obtained. Structural characterizations of the cells indicate a fully crystalline material with no preferential crystallographic orientation. This suggests that, as opposed to microcrystalline silicon cells deposited using silane, an amorphous phase is not required to passivate defects at column boundaries. These results are discussed in light of the specific growth mechanism and structural properties associated with film deposition using SiF4. They pave the way toward low-cost, high-performance polycrystalline cells on glass.
Keywords :
elemental semiconductors; gas mixtures; semiconductor growth; semiconductor thin films; silicon; solar cells; vapour deposition; Si; amorphous phase; cell structural characterizations; column boundaries; film deposition; fully crystalline material; glass; growth mechanism; high-efficiency microcrystalline silicon solar cell deposition; high-performance polycrystalline cells; silane-hydrogen-Ar mixtures; structural properties; Argon; Grain boundaries; Integrated circuits; Photovoltaic cells; Radio frequency; Silicon; Microcrystalline silicon; silicon tetrafluoride; solar cells; thin films;
fLanguage :
English
Journal_Title :
Photovoltaics, IEEE Journal of
Publisher :
ieee
ISSN :
2156-3381
Type :
jour
DOI :
10.1109/JPHOTOV.2012.2221683
Filename :
6335457
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