DocumentCode :
59340
Title :
Full Spectrum Photoluminescence Lifetime Analyses on Silicon Bricks
Author :
Mitchell, Bernhard ; Juhl, Mattias Klaus ; Green, Martin A. ; Trupke, T.
Author_Institution :
Australian Centre for Adv. Photovoltaics, Univ. of New South Wales, Kensington, NSW, Australia
Volume :
3
Issue :
3
fYear :
2013
fDate :
Jul-13
Firstpage :
962
Lastpage :
969
Abstract :
Bulk lifetime and doping images on silicon bricks can be obtained by spectral luminescence intensity ratio analysis as established recently. Here, we report on calibrated full spectrum band-to-band luminescence measurements taken on the flat side faces of mono- and multicrystalline silicon bricks at room temperature. Our results verify the physical modeling used for the spectral intensity ratio imaging. We further investigate three fitting methods employing spectrally resolved photoluminescence data to obtain bulk lifetime information.
Keywords :
carrier lifetime; elemental semiconductors; photoluminescence; silicon; Si; bulk lifetime; doping; fitting methods; full spectrum band-to-band luminescence; photoluminescence lifetime; silicon bricks; spectral luminescence intensity ratio imaging; spectrally resolved photoluminescence; temperature 293 K to 298 K; Bricks; carrier lifetime; imaging; ingot; photoluminescence; silicon; spectroscopy;
fLanguage :
English
Journal_Title :
Photovoltaics, IEEE Journal of
Publisher :
ieee
ISSN :
2156-3381
Type :
jour
DOI :
10.1109/JPHOTOV.2013.2259894
Filename :
6515654
Link To Document :
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