Title :
Low-voltage current mirror with extended bandwidth
Author :
Gupta, Madhu ; Malhotra, Ahana ; Malik, Anuj
Author_Institution :
Netaji Subhas Inst. of Technol., Delhi, India
Abstract :
In this paper, we present an improved low voltage current mirror with enhanced bandwidth. The bandwidth enhancement is obtained by using a compensation resistor between the gates of the primary transistor pair. In this technique, a carefully determined resistance is used in the diode connected MOSFET of the current mirror for enhancing the bandwidth. Active realization of the compensation resistance using a MOSFET (operating in the triode region) has also been applied to the low voltage current mirror[1] circuit. The proposed circuits have been simulated using SPICE for 0.18 μm CMOS technology and the obtained results are compared with their uncompensated topologies to show their effectiveness. The Bandwidth increased from 597 MHz in uncompensated circuit to 1.31 GHz (doubled) in the compensated circuit.
Keywords :
CMOS integrated circuits; MOSFET; UHF amplifiers; UHF diodes; UHF field effect transistors; UHF integrated circuits; compensation; current mirrors; resistors; SPICE CMOS technology; bandwidth 597 MHz to 1.31 GHz; bandwidth enhancement; compensation resistor; diode connected MOSFET; low-voltage current mirror; primary transistor pair; size 0.18 mum; uncompensated topology; Bandwidth; Equations; Low voltage; Mathematical model; Mirrors; Resistance; Transistors;
Conference_Titel :
Power Electronics (IICPE), 2012 IEEE 5th India International Conference on
Conference_Location :
Delhi
Print_ISBN :
978-1-4673-0931-8
DOI :
10.1109/IICPE.2012.6450477
