Low-voltage current mirror with extended bandwidth

Author

Gupta, Madhu ; Malhotra, Ahana ; Malik, Anuj

Author_Institution

Netaji Subhas Inst. of Technol., Delhi, India

fYear

2012

fDate

6-8 Dec. 2012

Firstpage

1

Lastpage

5

Abstract

In this paper, we present an improved low voltage current mirror with enhanced bandwidth. The bandwidth enhancement is obtained by using a compensation resistor between the gates of the primary transistor pair. In this technique, a carefully determined resistance is used in the diode connected MOSFET of the current mirror for enhancing the bandwidth. Active realization of the compensation resistance using a MOSFET (operating in the triode region) has also been applied to the low voltage current mirror[1] circuit. The proposed circuits have been simulated using SPICE for 0.18 μm CMOS technology and the obtained results are compared with their uncompensated topologies to show their effectiveness. The Bandwidth increased from 597 MHz in uncompensated circuit to 1.31 GHz (doubled) in the compensated circuit.

Keywords

CMOS integrated circuits; MOSFET; UHF amplifiers; UHF diodes; UHF field effect transistors; UHF integrated circuits; compensation; current mirrors; resistors; SPICE CMOS technology; bandwidth 597 MHz to 1.31 GHz; bandwidth enhancement; compensation resistor; diode connected MOSFET; low-voltage current mirror; primary transistor pair; size 0.18 mum; uncompensated topology; Bandwidth; Equations; Low voltage; Mathematical model; Mirrors; Resistance; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics (IICPE), 2012 IEEE 5th India International Conference on

Conference_Location

Delhi

ISSN

2160-3162

Print_ISBN

978-1-4673-0931-8

Type

conf

DOI

10.1109/IICPE.2012.6450477

Filename

6450477