DocumentCode
593647
Title
Benefit of mixed technologies for automotive radar components
Author
Domnesque, D. ; Auxemery, P. ; Viaud, J.P.
Author_Institution
United Monolithic Semicond., Villebon-sur-Yvette, France
fYear
2012
fDate
Oct. 31 2012-Nov. 2 2012
Firstpage
14
Lastpage
17
Abstract
Next generation of car radar components will require lower cost, high electrical performances, high reliability and flexibility in order to fit with various car radar architecture. Benefit of chip partionning based on both SiGe and GaAs technologies is presented for 24GHz and 77GHz applications.
Keywords
Ge-Si alloys; III-V semiconductors; MIMIC; MMIC; gallium arsenide; reliability; road vehicle radar; GaAs; MMIC; SiGe; automotive radar components; car radar architecture; car radar components; chip partionning; frequency 24 GHz; frequency 77 GHz; reliability; Automotive engineering; Gallium arsenide; MMICs; Next generation networking; Radar; Reliability; Silicon germanium; AsGa; Car Radar; MMIC; Rx; SiGe; Tx;
fLanguage
English
Publisher
ieee
Conference_Titel
Radar Conference (EuRAD), 2012 9th European
Conference_Location
Amsterdam
Print_ISBN
978-1-4673-2471-7
Type
conf
Filename
6450769
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