Design and fabrication of radio frequency amplifier with 3 dB π-network attenuator isolation

Author

Othman, A.R. ; Ibrahim, A.B. ; Husain, M.N. ; Johal, M.S. ; Rashid, Ahmar ; Ariffin, K. ; Saad, M.M.

Author_Institution

Fac. of Electron. & Comput. Eng., Univ. Teknikal Malaysia Melaka., Durian Tunggal, Malaysia

fYear

2012

fDate

11-13 Dec. 2012

Firstpage

388

Lastpage

393

Abstract

This paper presents the design and fabrication of radio frequency amplifier (RFA), which operates at 5.8 GHz unlicensed frequency for WiMAX application. The RFA designed used T-matching network consisting of lump reactive elements, 3 dB attenuator and microstrip line at the input and output impedance. The RFA developed in this project contribute a gain of 15.6 dB with overall noise figure of 2.4 dB. The overall measured bandwidth is 1.240 GHz with S parameters S₁₁, S₁₂ and S₂₂ measured are -12.4 dB, -25.5 dB and -12.3 dB respectively. The isolation result shows that there is a significant contribution using 3 dB π-network. The RFA used FET transistor EPA018A from Excelics Semiconductor Inc.

Keywords

WiMax; attenuators; field effect transistors; microstrip lines; radioaltimeters; radiofrequency amplifiers; π-network attenuator isolation; EPA018A; Excelics Semiconductor Inc; FET transistor; RFA; WiMAX application; frequency 5.8 GHz; microstrip line; radio frequency amplifier; Gain; Impedance; Impedance matching; Noise figure; Ports (Computers); Radio frequency; Scattering parameters; Amplifier; Microstrip; Radio Frequency Amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Electromagnetics (APACE), 2012 IEEE Asia-Pacific Conference on

Conference_Location

Melaka

Print_ISBN

978-1-4673-3114-2

Type

conf

DOI

10.1109/APACE.2012.6457700

Filename

6457700