Title :
Design and fabrication of radio frequency amplifier with 3 dB π-network attenuator isolation
Author :
Othman, A.R. ; Ibrahim, A.B. ; Husain, M.N. ; Johal, M.S. ; Rashid, Ahmar ; Ariffin, K. ; Saad, M.M.
Author_Institution :
Fac. of Electron. & Comput. Eng., Univ. Teknikal Malaysia Melaka., Durian Tunggal, Malaysia
Abstract :
This paper presents the design and fabrication of radio frequency amplifier (RFA), which operates at 5.8 GHz unlicensed frequency for WiMAX application. The RFA designed used T-matching network consisting of lump reactive elements, 3 dB attenuator and microstrip line at the input and output impedance. The RFA developed in this project contribute a gain of 15.6 dB with overall noise figure of 2.4 dB. The overall measured bandwidth is 1.240 GHz with S parameters S11, S12 and S22 measured are -12.4 dB, -25.5 dB and -12.3 dB respectively. The isolation result shows that there is a significant contribution using 3 dB π-network. The RFA used FET transistor EPA018A from Excelics Semiconductor Inc.
Keywords :
WiMax; attenuators; field effect transistors; microstrip lines; radioaltimeters; radiofrequency amplifiers; π-network attenuator isolation; EPA018A; Excelics Semiconductor Inc; FET transistor; RFA; WiMAX application; frequency 5.8 GHz; microstrip line; radio frequency amplifier; Gain; Impedance; Impedance matching; Noise figure; Ports (Computers); Radio frequency; Scattering parameters; Amplifier; Microstrip; Radio Frequency Amplifier;
Conference_Titel :
Applied Electromagnetics (APACE), 2012 IEEE Asia-Pacific Conference on
Conference_Location :
Melaka
Print_ISBN :
978-1-4673-3114-2
DOI :
10.1109/APACE.2012.6457700
