High performance GaSb/InAs superlattice long-wave infrared focal plane array

Author

Gunapala, S.D. ; Rafol, S.B. ; Ting, D.Z. ; Soibel, A. ; Liu, J.K. ; Khoshakhlagh, A. ; Keo, S.A. ; Mumolo, J.M.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

fYear

2012

fDate

13-16 Dec. 2012

Firstpage

1

Lastpage

4

Abstract

We describe the demonstration of a ¼ VGA format long-wavelength infrared focal plane array based on an InAs/GaSb superlattice absorber surrounded by an electron-blocking and a hole-blocking unipolar barrier. An 8.8 μm cutoff focal plane without antireflection coating based on this complementary barrier infrared detector design has yielded noise equivalent differential temperature of 18.6 mK at operating temperature of 80K, with 300 K background and f/2 cold-stop.

Keywords

III-V semiconductors; focal planes; gallium compounds; indium compounds; infrared detectors; optical design techniques; photodetectors; semiconductor device noise; semiconductor superlattices; 1/4 VGA format long-wavelength infrared focal plane array; GaSb-InAs; complementary barrier infrared detector design; electron-blocking unipolar barrier; f/2 cold-stop; high performance superlattice long-wave infrared focal plane array; hole-blocking unipolar barrier; noise equivalent differential temperature; size 8.8 mum; superlattice absorber; temperature 300 K; temperature 80 K; Apertures; Arrays; Dark current; Detectors; Frequency measurement; Superlattices; Temperature measurement; focal plane arrays; infrared detectors; superlattices;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics Global Conference (PGC), 2012

Conference_Location

Singapore

Print_ISBN

978-1-4673-2513-4

Type

conf

DOI

10.1109/PGC.2012.6458021

Filename

6458021