Title :
High performance GaSb/InAs superlattice long-wave infrared focal plane array
Author :
Gunapala, S.D. ; Rafol, S.B. ; Ting, D.Z. ; Soibel, A. ; Liu, J.K. ; Khoshakhlagh, A. ; Keo, S.A. ; Mumolo, J.M.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
We describe the demonstration of a ¼ VGA format long-wavelength infrared focal plane array based on an InAs/GaSb superlattice absorber surrounded by an electron-blocking and a hole-blocking unipolar barrier. An 8.8 μm cutoff focal plane without antireflection coating based on this complementary barrier infrared detector design has yielded noise equivalent differential temperature of 18.6 mK at operating temperature of 80K, with 300 K background and f/2 cold-stop.
Keywords :
III-V semiconductors; focal planes; gallium compounds; indium compounds; infrared detectors; optical design techniques; photodetectors; semiconductor device noise; semiconductor superlattices; 1/4 VGA format long-wavelength infrared focal plane array; GaSb-InAs; complementary barrier infrared detector design; electron-blocking unipolar barrier; f/2 cold-stop; high performance superlattice long-wave infrared focal plane array; hole-blocking unipolar barrier; noise equivalent differential temperature; size 8.8 mum; superlattice absorber; temperature 300 K; temperature 80 K; Apertures; Arrays; Dark current; Detectors; Frequency measurement; Superlattices; Temperature measurement; focal plane arrays; infrared detectors; superlattices;
Conference_Titel :
Photonics Global Conference (PGC), 2012
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-2513-4
DOI :
10.1109/PGC.2012.6458021
