• DocumentCode
    594146
  • Title

    Ge-content dependent efficiency of Si/SiGe heterojunction solar cell

  • Author

    Das, Manab Kr ; Choudhary, Santosh K.

  • Author_Institution
    Dept. of Electron. Eng., Indian Sch. of Mines, Dhanbad, India
  • fYear
    2012
  • fDate
    13-16 Dec. 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Efficiency of n-Si1-xGex/p-Si heterojunction solar cell with different Ge-content is studied in this paper. Carrier confinement at the heterointerface between Si and SiGe is considered in this study. A nonlinear variation of overall efficiency of Si/SiGe solar cell with Ge-content (x) is obtained. Efficiency initially increases with increase in x and after a maximum value it decreases. Efficiency without considering the effect of carrier confinement is also studied.
  • Keywords
    Ge-Si alloys; elemental semiconductors; p-n heterojunctions; silicon; solar cells; Ge-content dependent efficiency; Si-SiGe heterojunction solar cell; Si1-xGex-Si; carrier confinement effect; heterointerface; heterojunction solar cell efficiency; nonlinear variation; overall efficiency; Absorption; Carrier confinement; Heterojunctions; Mathematical model; Photovoltaic cells; Silicon; Silicon germanium; Si/SiGe; carrier confinement; heterojunction; solar cell;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Global Conference (PGC), 2012
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4673-2513-4
  • Type

    conf

  • DOI
    10.1109/PGC.2012.6458050
  • Filename
    6458050
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=594146