DocumentCode
594161
Title
Experimental and theoretical study of excitonic electroabsorption in high-purity GaAs at room temperature
Author
Sapkota, D.P. ; Kayastha, M.S. ; Takahashi, Masaharu ; Wakita, Ken
Author_Institution
Grad. Sch. of Eng., Chubu Univ., Kasugai, Japan
fYear
2012
fDate
13-16 Dec. 2012
Firstpage
1
Lastpage
4
Abstract
The absorption spectrum in high-purity GaAs has been theoretically studied in the presence of electric field taking into account of excitonic transition and continuum band transition at room temperature. We have calculated the Stark shift, height of exciton peak, linewidth broadening of exciton, extinction ratio as a function of electric field. We also have compared these results with the experimental results and found the close agreement with experimental.
Keywords
III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; spectral line broadening; GaAs; Stark shift; continuum band transition; exciton peak; excitonic electroabsorption; excitonic transition; extinction ratio; linewidth broadening; temperature 293 K to 298 K; Photonics; Electroabsorption; excitonic; room temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Global Conference (PGC), 2012
Conference_Location
Singapore
Print_ISBN
978-1-4673-2513-4
Type
conf
DOI
10.1109/PGC.2012.6458083
Filename
6458083
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