Fabrication of F-ion implanted quantum well intermixed waveguide grating

This paper reports the ion implantation induced quantum well intermixing used to fabricate waveguide gratings for applications at CWDM wavelengths on InGaAsP/InP multi quantum well structure. The waveguide is fabricated using reactive ion etching (methane chemistry) with a surface roughness 2~3nm. Focused ion beam is used to open windows for fluorine implantation on titanium mask followed by anneal under forming gas environment. The transmission spectrum of the waveguide has been measured and found cross talks of -10dB among the adjacent channels. The insertion loss of the fabricated waveguide gratings is less than 5dB.