Microwave Determination of Quantum-Well Capture and Escape Time in Light-Emitting Transistors

Author

Hsiao-Lun Wang ; Peng-Hao Chou ; Chao-Hsin Wu

Author_Institution

Nat. Taiwan Univ., Taipei, Taiwan

Volume

60

Issue

3

fYear

2013

fDate

Mar-13

Firstpage

1088

Lastpage

1091

Abstract

We report the determination of In_0.20Ga_0.80As quantum-well (QW) capture and escape time by utilizing electrical microwave measurement on an InGaP/GaAs light-emitting transistor (LET) platform. The emitter-to-collector transit times τ_ec of the LET and the heterojunction bipolar transistor (HBT) are measured and extracted under the same bias condition (V_bc = 0 V and J_c = 22.6 kA/cm²). Small-signal model analysis shows that the LET exhibits a larger base transit time τ_t of 25 ps compared with 5 ps of the HBT. The difference, i.e., 20 ps, hence is attributed to the carrier capturing/escaping processes caused by the QWs embedded in the base region of the LET.

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; light emitting devices; microwave measurement; quantum well devices; semiconductor device models; semiconductor quantum wells; InGaP-GaAs; LET platform; base transit time; carrier capturing-escaping processes; electrical microwave measurement; emitter-to-collector transit times; heterojunction bipolar transistor; light-emitting transistors; microwave determination; quantum-well capture-escape time; small-signal model analysis; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit modeling; Masers; Microwave measurements; Microwave transistors; Capture time; escape time; light-emitting transistor (LET); quantum well (QW);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2242330

Filename

6463445