Title :
Readout integrated circuit with dual mode design for infrared focal plane array photo-detector
Author :
Tai-Ping Sun ; Yi-Chuan Lu ; Hsiu-Li Shie ; Shiang-Feng Tang ; Wen-Jen Lin
Author_Institution :
Dept. of Electr. Eng., Nat. Chi Nan Univ., Nantou, Taiwan
Abstract :
This paper presents the readout circuit based on Direct Injection (DI) and Capacitive Transimpedance Amplifier (CTIA). The hybrid type of CTIA and DI was adopted as the pixel circuit´s design in this paper. The two different structures were combined into unit pixels, and each pixel has two modes of readout. Furthermore, the chip was produced with TSMC 2P4M 5V technology, and the array size is 10×8. The output swing is 2.1V and power consumption is 9.4 mW, according to measurement results. The Layout area is 40um × 40um, and the two modes are selected by an external pin. The dual mode structure enables single- and dual-band infrared sensors. The readout chip can operate in 2kHz ~ 6MHz, and the input photocurrent range is 1pA ~ 50nA, depending on integration time; thus, it can be suitable for various detectors.
Keywords :
CMOS integrated circuits; focal planes; infrared detectors; integrated optics; integrated optoelectronics; operational amplifiers; optical design techniques; photoconductivity; photodetectors; power consumption; 10X8 array size; TSMC 2P4M CMOS technology; capacitive transimpedance amplifier; current 1 pA to 50 nA; direct injection; dual mode design; dual-band infrared sensors; frequency 2 kHz to 6 MHz; infrared focal plane array photodetector; input photocurrent; layout area; output swing; power 9.4 mW; power consumption; readout chip; readout integrated circuit; single-band infrared sensors; size 40 mum; voltage 2.1 V; voltage 5 V; Switches; capacitive transimpedance amplifier; direct injection; integration time; pixel; readout circuit;
Conference_Titel :
Photonics Global Conference (PGC), 2012
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-2513-4
DOI :
10.1109/PGC.2012.6458109