• DocumentCode
    594200
  • Title

    High bandwidth 0.35μm CMOS transimpedance amplifier

  • Author

    Hammoudi, E. ; Imad, B. ; Mohamed, Darouach

  • Author_Institution
    Instrum. Lab., USTHB, Algiers, Algeria
  • fYear
    2012
  • fDate
    5-6 Nov. 2012
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    A transimpedance amplifier (TIA) has been designed in a 0.35 μm digital CMOS technology for Gigabit Ethernet. It is based on the structure proposed by Mengxiong Li [1]. This paper presents an amplifier which exploits the regulated cascode (RGC) configuration as the input stage with an integrated optical receiver which consists of an integrated photodetector, thus achieving as large effective input transconductance as that of Si Bipolar or GaAs MESFET. The RGC input configuration isolates the input parasitic capacitance including photodiode capacitance from the bandwidth determination better than common-gate TIA. A series inductive peaking is used for enhancing the bandwidth. The proposed TIA has transimpedance gain of 51.56 dBΩ, and 3-dB bandwidth of 6.57 GHz with two inductor between the RGC and source follower for 0.1 pF photodiode capacitance. The proposed TIA has an input courant noise level of about 21.57 pA/Hz0.5 and it consumes DC power of 16 mW from 3.3 V supply voltage.
  • Keywords
    CMOS analogue integrated circuits; III-VI semiconductors; Schottky gate field effect transistors; amplifiers; capacitance; gallium arsenide; local area networks; optical receivers; photodetectors; photodiodes; silicon; GaAs; Gigabit Ethernet; MESFET; RGC input configuration; Si; bandwidth 6.57 GHz; common-gate TIA; digital CMOS technology; high bandwidth 0.35μm CMOS transimpedance amplifier; input transconductance; integrated optical receiver; integrated photodetector; parasitic capacitance; photodiode capacitance; power 16 mW; regulated cascode configuration; series inductive peaking; size 0.35 mum; voltage 3.3 V; Bandwidth; CMOS integrated circuits; Gain; Impedance; Noise; Parasitic capacitance; Photodiodes; CMOS analog integrated circuits; TIA; bandwidth enhance; integrated inductors; shunt and series peaking;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Complex Systems (ICCS), 2012 International Conference on
  • Conference_Location
    Agadir
  • Print_ISBN
    978-1-4673-4764-8
  • Type

    conf

  • DOI
    10.1109/ICoCS.2012.6458539
  • Filename
    6458539